- New
Politiche per la sicurezza
(modificale nel modulo Rassicurazioni cliente)
Politiche per le spedizioni
(modificale nel modulo Rassicurazioni cliente)
Politiche per i resi
(modificale nel modulo Rassicurazioni cliente)

| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Drain Current-Max (ID) | 12.0 A |
| Drain-source On Resistance-Max | 0.1 ohm |
| DS Breakdown Voltage-Min | 60.0 V |
| Feedback Cap-Max (Crss) | 160.0 pF |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1.0 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150.0 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max | 25.0 W |
| Pulsed Drain Current-Max (IDM) | 48.0 A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 170.0 ns |
| Turn-on Time-Max (ton) | 75.0 ns |
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